Publications
Here are most of the publications from the MBE lab. Most of them are available online.
Use of High Temperature Hydrogen Annealing to Remove Subsurface Damage in Bulk GaN, T.H. Myers, B.L. VanMil, L.J. Holbert, C.Y. Peng, C.D. Stinespring, J. Alam, J.A. Freitas, Jr., V.A. Dmitriev, A. Pechnikov, Y. Shapovalova, V. Ivantsov.
Predicted Lattice Relaxation Around Point Defects in Zinc Selenide, L. Muratov, S. Little, Y. Yang, B.R. Cooper, T.H. Myers, and J.M. Wills, Phys. Rev. B 64, 035206 (2001)
Incorporation-related structural issues for beryllium doping during growth of GaN by rf-plasma molecular beam epitaxy, A. J. Ptak, Lijun Wang, N. C. Giles and T. H. Myers, L. T. Romano, C. Tian, R. A. Hockett, S. Mitha and P. Van Lierde, to be published in Appl. Phys. Lett. (Dec., 2001).
Controlled oxygen doping of GaN using plasma assisted molecular beam epitaxy, A.J. Ptak, L.J. Holbert, L. Ting, C.H. Swartz, M. Moldovan, N.C. Giles, T.H. Myers, P. Van Lierde, C. Tian, R.A. Hockett, and S. Mitha, A.E. Wickenden , D.D. Koleske, and R.L. Henry, Appl. Phys. Lett. 79, 2740 (2001)
Characterization of Nitrides by ODMR/EPR, E.R. Glaser, S.C. Binari, G.C. Braga,W.E. Carlos, J.A. Freitas, Jr, R.L. Henry, D.D. Koleske, W.J. Moore, B.V. Shanabrook, A.E. Wickenden, M.W. Bayer, M.S. Brandt, H. Obloh, P. Kozodoy, S.P. DenBaars, U.K. Miskra, S. Nakamura, E. Haus, J.S. Speck, J.E. Van Nostrand, M.A. Sanchez, E. Calleja, A.J. Ptak, T.H. Myers, and R.J. Molnar, accepted for publication in Materials Science and Engineering B.
Modeling of Chlorine Related Defects and Complexes in ZnMgSe, Yaxiang Yang, Leonid Muratov, Bernard R. Cooper, Thomas H. Myers and John M. Wills, Mat. Res. Soc. Proc. 667, AA4.26.1 (2001)
Comparison of Magnesium and Beryllium During rf-Plasma Growth of GaN by Molecular Beam Epitaxy, A.J. Ptak, T.H. Myers, Lijun Wang, N.C. Giles, M. Moldovan, C.R. Da Cunha, L.A. Hornak, C. Tian, R.A. Hockett, S. Mitha, and P. Van Lierde, Mat. Res. Soc. Proc. 639 (2001).
Defect Segregation in CdGeAs2, P.G. Schunemann, S.D. Setzler, and T.M. Pollak, A.J. Ptak and T.H. Myers, J. Cryst. Growth 225 440 (2001).
Magnesium incorporation in GaN grown by rf-plasma assisted molecular beam epitaxy, L.T. Romano, C.G. Van de Walle, J.E. Northrup, A.J. Ptak and T.H. Myers. Appl. Phys. Lett. 78, 285 (2001).
Effects of High-Energy Electrons during Growth of Wide Band Gap Semiconductors, B.L. VanMil, A.J. Ptak, N.C. Giles, T.H. Myers, P.J. Treado, M. P. Nelson, R. Smith, and J.M. Ribar, J. Electron. Mater. 30, 785 (2000).
Magnesium and Beryllium Doping During rf-Plasma MBE Growth of GaN, T.H. Myers, A.J. Ptak, Lijun Wang and N.C. Giles. Inst. of Pure and Appl. Phys. Conference Series 1, 451 (2000).
Faceted inversion domain boundary in GaN films doped with Mg, A.J. Ptak, T.H. Myers, L.T. Romano, and J.E. Northrup. Appl. Phys. Lett. 77, 2479 (2000).
Point Defect Modification in Wide Band Gap Semiconductors Through Interaction with High Energy Electrons – Is RHEED Truly Benign?, T.H. Myers, A.J. Ptak, B.L. VanMil, M. Moldovan, P.J. Treado, M.P. Nelson, J.M. Rivar and C.T. Zugates, J. Vac. Sci. Technol. B18(4), 2295 (2000).
An investigation of long and short persistent photoconductivity in undoped GaN grown by rf plasma assisted epitaxy, A.J. Ptak, V.A. Stoica, L.J. Holbert, M. Moldovan, and T.H. Myers, MRS Internet J. Nitride Semicond. Res. 5S1,W11.45(2000). Also appears in Mat. Res. Soc. Proc. 595, W11.45.1(1999).
Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources, A.J. Ptak, K.S. Ziemer, L.J. Holbert, C.D. Stinespring, and T.H. Myers, MRS Internet J. Nitride Semicond. Res. 5S1,W3.33(2000). Also appears in Mat. Res. Symp. Proc. 595.W3.33.1,(1999).
Temperature Dependent Hall Measurements made on CdGeAs2, A.J. Ptak, K.T. Stevens, T.H. Myers, P.G. Shuneman, S.D. Setzler, and T.M. Pollak, Mat. Res. Soc. Proc. 607, 427 (2000).
The relation of active nitrogen species to high-temperature limitations for (0001) GaN growth by radio frequency plasma-assisted molecular beam epitaxy, A.J. Ptak, M.R. Millecchia, T.H. Myers, K.S. Ziemer, and C.D. Stinespring, Appl. Phys. Lett. 74, 3836 (1999).
Influence of active nitrogen species on high temperature limitations for (0001) GaN grown by rf plasma-assisted molecular beam epitaxy, T.H. Myers, M.R. Millecchia, A.J. Ptak, K.S. Ziemer, and C.D. Stinespring, to appear in July issue of J. Vac. Sci. Technol. B.
Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire, A.J. Ptak, K.S. Ziemer, M.R. Millecchia, C.D. Stinespring and T.H. Myers, MRS Internet J. Nitride Semicond. Res. 4S1, G3.10 (1999). Also to appear in Mat. Res. Symp. Proc.
Xray photoelectron spectroscopy study of oxide and Te overlayers on as-grown and etched HgCdTe, L.S. Hirsch, R. Haakenaasen, T. Colin, K.S. Ziemer, C.D. Stinespring, S. Lovold and T.H. Myers, Accepted for publication in J. Electron. Mat.
Investigation of donor-acceptor pair luminescence from ZnSe:N epilayers, M. Moldovan, T.H. Myers and N.C. Giles, J. Appl. Phys. 84, 5743 (1998).
Influence of growth conditions, inversion domains, and atomic hydrogen on growth of (0001) GaN by molecular beam epitaxy, T.H. Myers, L.S. Hirsch, L.T. Romano, and M.R. Richards-Babb, J.Vac. Sci. Technol. B16, 2261 (1998).
Hydrogenation of Undoped and Nitrogen Doped CdTe and ZnSe Grown by Molecular Beam Epitaxy, L. S. Hirsch, S. D. Setzler, A. J. Ptak, N. C. Giles and T.H. Myers, Mat. Res. Symp. Proc. 513, 263 (1998).
Theoretical Study of Point Defect Effects on the Structural and Electronic Properties of Zinc Selenide, S. Little, B.R. Cooper, T.H. Myers, J.M. Wills and D.L. Price, Submitted to Phys. Rev. B.
The Influence of Inversion Domains on Surface Morphology in GaN Grown by Molecular Beam Epitaxy, L.T. Romano and T.H. Myers, Appl. Phys. Lett. 71, 3486 (1997)
The Use of Atomic Hydrogen for Low Temperature oxide removal from HgCdTe, L. S. Hirsch, K. S. Ziemer, M. R. Richards-Babb, C. D. Stinespring, T. H. Myers Thierry Colin, J. Electron. Mat. 27, 651 (1998)
Characterization of Atomic Hydrogen-Etched HgCdTe Surfaces, K. S. Ziemer and C. D. Stinespring, L. S. Hirsch and T. H. Myers, Journal of Crystal Growth 191, 594 (1998).
--Nitrogen Doping of ZnSe and CdTe Epilayers: A Comparison of Two rf Sources, M. Moldovan, L.S. Hirsch, A.J. Ptak, C.D. Stinespring, T.H. Myers and N.C. Giles, J. Electron. Mater. 27, 756 (1998).
Compensating Defects in Heavily-Doped Zinc Selenide: A Photoluminescence Study, M. Moldovan, S.D. Setzler, T.H. Myers, L.E. Halliburton and N.C. Giles, Appl. Phys. Lett. 70, 1724 (1997)
Surface Morphology of GaN Films Determined From X-Ray Reflectivity, D. Lederman, M. R. Richards-Babb, Zhonghai Yu, and T. H. Myers, Appl. Phys. Lett. 71, 368 (1997)
The role of atomic hydrogen for substrate cleaning for growth of CdTe buffer layers at reduced temperatures on silicon, GaAs, CdTe and HgCdTe, L.S. Hirsch, Zhonghai Yu, T.H. Myers and M. Richards-Babb, Mat. Res. Soc. Symp. 450, 263 (1997).
The effect of hydrogen on the growth of gallium nitride on saphire under Ga-rich conditions, S.L. Buczkowski, Zhonghai Yu, M. Richards-Babb, N.C. Giles, T.H. Myers and L.T. Romano, Mat. Res. Soc. Symp. 449, 197 (1997).
Photoluminescence and electron paramagnetic resonance studies of nitrogen-doped ZnSe epilayers, M. Moldovan, N.C. Giles, S.D. Setzler, L.E. Halliburton, Zhonghai Yu and T.H. Myers, Mat. Res. Soc. Symp. 442, 555 (1997).
Evaluation of low-temperature interdiffusion in Hg-based superlattices by monitoring the E1 reflectance peak, M.A. Mattson, T.H. Myers, M. Richards-Babb and J. R. Meyer, J. Electron. Mat. 26, 578 (1997).
The use of atomic hydrogen for substrate cleaning for subsequent growth of II-VI semiconductors, L.S. Hirsch, Zhonghai Yu, S.L. Buczkowski M. Richards-Babb, and T.H. Myers, J. Electron. Mat. 26, 534 (1997).
Photoluminescence of nitrogen-doped ZnSe layers, M. Moldovan, S.D. Setzler, Zhonghai Yu, T.H. Myers, L.E. Halliburton and N.C. Giles, J. Electron. Mat. 26, 732 (1997).
Observation of singly ionized selenium vacancies in ZnSe grown by molecular beam epitaxy, S.D. Setzler, M. Moldovan, Zhonghai Yu, T.H. Myers, N.C. Giles and L.E. Halliburton, Appl. Phys. Lett. 70, 2274 (1997).
An infrared absorption investigation of hydrogen, deuterium and nitrogen in ZnSe grown by molecular beam epitaxy, Zhonghai Yu, S. L. Buczkowski, L. S. Hirsch, and T. H. Myers, J. Appl. Phys. 80, 6425 (1996).
The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy, Zhonghai Yu, S.L. Buczkowski, N.C. Giles, and T. H. Myers, Appl. Phys. Lett. 69, 2731 (1996)
Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen, Zhonghai Yu, S.L. Buczkowski, N.C. Giles, and T. H. Myers, Appl. Phys. Lett. 69, 82 (1996).
An atomic force microscopy study of the initial nucleation of GaN on sapphire, M. Richards-Babb, S.L. Buczkowski, Zhonghai Yu, and T.H. Myers, Mat. Res. Soc. Symp. 395, 237 (1996)
Hydrogenation of undoped and nitrogen doped CdTe grown by molecular beam epitaxy, Zhonghai Yu, S.L. Buczkowski, M.C. Petcu, N.C. Giles, and T. H. Myers, Appl. Phys. Lett. 68, 529 (1996)
Photon Assisted Growth of Nitrogen-Doped CdTe and the Effects of Hydrogen Incorporation During Growth, Zhonghai Yu, S.L. Buczkowski, M.C. Petcu, N.C. Giles T.H. Myers, and M. Richards-Babb, J. Electron. Mat. 25, 1247 (1996).
Interpretation of near bandedge photoreflectance spectra in CdTe, Zhonghai Yu, S.G. Hofer, N.C. Giles, T.H. Myers, and C.J. Summers, Phys. Rev. B51, 13789 (1995)
Electron Cyclotron Resonance Etching of HgTe-CdTe Superlattices Grown by Photo-Assisted MBE, K.A. Harris, D.E. Endres, R.W. Yanka, L.M. Mohnkern, T.H. Myers, A.N. Klymachyov, C.M. Vitus and N.S. Dalal, J. Electron. Mat. 24, 1201 (1995).
Optical Properties of Undoped and Iodine Doped CdTe, N.C. Giles, Jaesun Lee, T.H. Myers, Zhonghai Yu, R.G. Benz II, B.K. Wagner and C.J. Summers, J. Electron. Mat. 24, 693 (1995).
Reflectance and photoreflectance monitoring of MBE growth of Hg-based materials, Zhonghai Yu, M.A. Mattson, T.H. Myers, K.A. Harris, R.W. Yanka, L.M. Mohnkern, L.C. Lew Yan Voon, L.R. Ram-Mohan, R.G. Benz II, B.K. Wagner and C.J. Summers, J.
Electron. Mat. 24, 685 (1995).
A scanning tunneling microscopy investigation of etched HgTe/CdTe superlattice surfaces, T.H. Myers, A.N. Klymachyov, C.M. Vitus, N.S. Dalal, D.E. Endres, K.A. Harris, R.W. Yanka, and L.M. Mohnkern, Appl. Phys. Lett. 66, 224 (1995)
Optical Quenching of Bound Excitons in CdTe and CdZnTe Alloys: A Technique to Measure Copper Concentrations, Jaesun Lee, T.H. Myers, N.C. Giles, B.E. Dean and C.J. Johnson, J. Appl. Phys. 76, 537 (July 1, 1994).
Photoluminescence from heteroepitaxial (211)B CdTe grown on (211)B GaAs by molecular beam epitaxy, Jeffrey S. Gold, T.H. Myers, N.C. Giles, K.A. Harris, L.M. Mohnkern and R.W. Yanka, J. Appl. Phys. 74., 6866 (1993).
Wannier-Stark quantization by internal field in the HgTe/CdTe superlattice, Ikai Lo, W.C. Mitchel, K.A. Harris, R.W. Yanka, L.M. Mohnkern, A.R. Reisinger and T.H. Myers, Appl. Phys. Lett. 62, 1533 (1993).
Bandgap Uniformity and Layer Stability of HgTe-CdTe Superlattices Grown by Molecular Beam Epitaxy, R.W. Yanka, K.A. Harris, L.M. Mohnkern, A.R. Reisinger, T.H. Myers and N. Otsuka, J. Electron. Mat.22, 1107 (1993)
HgTe-CdTe superlattices for infrared detection revisited, T.H. Myers, J.R. Meyer, C.A. Hoffman and L.R. Ram-Mohan, Appl. Phys. Lett. 61, 1814 (1992)
Dopant Diffusion in HgCdTe grown by photon assisted molecular beam epitaxy, T.H. Myers, K.A. Harris, R.W. Yanka, L.M. Mohnkern, R.J. Williams, and G.K. Dudoff, J. Vac. Sci. Technol. B10, 1438 (1992)
Properties of (211)B HgTe-CdTe superlattices grown by photon assisted molecular beam epitaxy, K.A. Harris, R.W. Yanka, L.M. Mohnkern, A.R. Reisinger, T.H. Myers, Z. Zhang, Z. Yu, S. Hwang and J.F. Schetzina, J. Vac. Sci. Technol. B10,1574 (1992)
Carrier lifetime in HgTe/CdTe superlattices grown by photoassisted molecular beam epitaxy, A.R. Reisinger, K.A. Harris, T.H. Myers, R.W. Yanka, L.M. Mohnkern and C.A. Hoffman, Appl. Phys. Lett. 61, 699 (1992).
Thermal Effects in Hg-Diffused long-wave infrared HgCdTe photodiodes, A.R. Reisinger, F.J. Weaver, M.A. Rader, J.J. Voelker, S.J. Caputi, T.H. Myers and J.F. Shanley, J. Appl. Phys 71, 483 (1992).