Molecular Beam Epitaxy is a semiconductor growth technique in which thermal beams of atoms are directed onto a heated substrate under ultra high vacuum conditions. Pressures are generally on the order of 10^-10Torr. This prevents inadvertent doping of samples by ambient atoms/molecules like oxygen and leads to high performance devices. Thickness can be controlled at a near-atomic level as growth rates are on the order of .3μm/hour. Lower growth temperatures lead to minimization of thermal decomposition effects.